Hidehiro Fujiwara

16.4 An 89TOPS/W and 16.3TOPS/mm² All-Digital SRAM-Based Full-Precision Compute-In Memory Macro in 22nm for Machine-Learning Edge Applications

Yu-Der Chih, Po-Hao Lee, Hidehiro Fujiwara et al. · 2021 · 308 citations

Artificial Intelligence, Engineering, Machine Learning +18

A 5-nm 254-TOPS/W 221-TOPS/mm² Fully-Digital Computing-in-Memory Macro Supporting Wide-Range Dynamic-Voltage-Frequency Scaling and Simultaneous MAC and Write Operations

Hidehiro Fujiwara, H. Mori, Wei-Chang Zhao et al. · 2022 IEEE International Solid- State Circuits Conference (ISSCC) · 2022 · 183 citations

Engineering, Vlsi Design, Emerging Memory Technology +18

An Area-Conscious Low-Voltage-Oriented 8T-SRAM Design under DVS Environment

Yasuhiro Morita, Hidehiro Fujiwara, Hiroki Noguchi et al. · 2007 · 153 citations

Low-power Electronics, Non-volatile Memory, Electrical Engineering +11

Which is the best dual-port SRAM in 45-nm process technology? — 8T, 10T single end, and 10T differential —

Hiroki Noguchi, Shunsuke Okumura, Yusuke Iguchi et al. · 2008 · 77 citations

Low-power Electronics, Electrical Engineering, Engineering +11

A 4nm 6163-TOPS/W/b $\mathbf{4790-TOPS/mm^{2}/b}$ SRAM Based Digital-Computing-in-Memory Macro Supporting Bit-Width Flexibility and Simultaneous MAC and Weight Update

H. Mori, Wei-Chang Zhao, Cheng-En Lee et al. · 2023 · 75 citations

Engineering, Emerging Memory Technology, Computer Architecture +21