Yun Shi

Technology Scaling and Device Design for 350 GHz RF Performance in a 45nm Bulk CMOS Process

Hongmei Li, B. Jagannathan, Jing Wang et al. · 2007 · 47 citations

Electrical Engineering, Engineering, Radio Frequency +13

Forced dissipative Boussinesq equation for solitary waves excited by unstable topography

Hong Yang, Bao Shu Yin, Yun Shi · Nonlinear Dynamics · 2012 · 28 citations

Solitary Waves, Physics, Nonlinear Wave Propagation +5

Simulation of a new back junction approach for reducing charge collection in 200 GHz SiGe HBTs

Guofu Niu, Hua Yang, Muthubalan Varadharajaperumal et al. · IEEE Transactions on Nuclear Science · 2005 · 23 citations

Engineering, Electromagnetic Compatibility, Semiconductor Device +17

BESSEL BEAM GENERATED BY THE ZERO-INDEX METALENS

Fusheng Deng, Zhiwei Guo, Mina Ren et al. · Electromagnetic waves · 2022 · 21 citations · Full text

On the consistent modeling of band-gap narrowing for accurate device-level simulation of scaled sige hbts

Yun Shi, Guofu Niu, John D. Cressler et al. · IEEE Transactions on Electron Devices · 2003 · 18 citations

Wide-bandgap Semiconductor, Engineering, Scaled Sige Hbts +22