Chen-Hsi Lin

Low-Power and Highly Reliable Multilevel Operation in $ \hbox{ZrO}_{2}$ 1T1R RRAM

Ming-Chi Wu, Yi-Wei Lin, Wen-Yueh Jang et al. · IEEE Electron Device Letters · 2011 · 99 citations

Materials Engineering, Non-volatile Memory, Electrical Engineering +15

Self-rectifying bipolar TaO x /TiO 2 RRAM with superior endurance over 10 12 cycles for 3D high-density storage-class memory

Chung-Wei Hsu, I‐Ting Wang, Chun‐Li Lo et al. · Symposium on VLSI Technology · 2013 · 97 citations

Materials Science, Materials Engineering, Electrical Engineering +14

Resistive Switching Mechanisms ofV-Doped$hboxSrZrO_3$Memory Films

Chun‐Chieh Lin, Bing-Chung Tu, Chun‐Chieh Lin et al. · IEEE Electron Device Letters · 2006 · 94 citations

Electrical Engineering, Electronic Devices, Engineering +13

Voltage-Polarity-Independent and High-Speed Resistive Switching Properties of V-Doped $\hbox{SrZrO}_{3}$ Thin Films

Chun‐Chieh Lin, Chih-Yang Lin, Meng-Han Lin et al. · IEEE Transactions on Electron Devices · 2007 · 66 citations

Engineering, Thin Film Process Technology, Phase Change Memory +16

3D resistive RAM cell design for high-density storage class memory—a review

Boris Hudec, Chung-Wei Hsu, I‐Ting Wang et al. · Science China Information Sciences · 2016 · 58 citations

Non-volatile Memory, Electrical Engineering, Engineering +8