Wen-Yueh Jang

Bistable resistive switching of a sputter-deposited Cr-doped SrZrO/sub 3/ memory film

Chih‐Yi Liu, Pei-Hsun Wu, A. Wang et al. · IEEE Electron Device Letters · 2005 · 106 citations

Engineering, Phase Change Memory, Reversible Switching Operation +16

Low-Power and Highly Reliable Multilevel Operation in $ \hbox{ZrO}_{2}$ 1T1R RRAM

Ming-Chi Wu, Yi-Wei Lin, Wen-Yueh Jang et al. · IEEE Electron Device Letters · 2011 · 99 citations

Materials Engineering, Non-volatile Memory, Electrical Engineering +15

Self-rectifying bipolar TaO x /TiO 2 RRAM with superior endurance over 10 12 cycles for 3D high-density storage-class memory

Chung-Wei Hsu, I‐Ting Wang, Chun‐Li Lo et al. · Symposium on VLSI Technology · 2013 · 97 citations

Materials Science, Materials Engineering, Electrical Engineering +14

Flexible One Diode–One Resistor Crossbar Resistive-Switching Memory

Jiun-Jia Huang, Tuo‐Hung Hou, Chung-Wei Hsu et al. · Japanese Journal of Applied Physics · 2012 · 49 citations

Engineering, Emerging Memory Technology, Electronic Devices +16

3D vertical TaO<inf>x</inf>/TiO<inf>2</inf> RRAM with over 10<sup>3</sup> self-rectifying ratio and sub-μA operating current

Chung-Wei Hsu, Chia-Chen Wan, I‐Ting Wang et al. · 2013 · 26 citations

Non-volatile Memory, Engineering, A Operating +16