IEEE Transactions on Electron Devices · 2007 · 66 citations · 19 references
Natural SciencesMaterials EngineeringMaterials ScienceCeramic MaterialsElectronic MaterialsThin FilmsConductive MaterialsElectrical ConductivityElectrode MaterialsMemory DevicesMemristive MaterialsThin Film Electrical PropertiesConductionEndurance CharacteristicsHigh-speed SwitchingNonvolatile Memory MaterialsResistive SwitchingResistive Switching MaterialsSwitching DevicesSwitching Speed
In this paper, nonpolar resistive switching behavior is reported for the first time in a SZO-based memory device. The electrode materials used which have different conductivities affect the resistive switching properties of the device. The Al/V:SZO-LNO/Pt device shows nonpolar switching behavior, whereas the Al/V:SZO/LNO device has bipolar switching property. The resistance ratios of these two devices are quite distinct owing to the difference between the resistance of low resistance states. The Al/V:SZO-LNO/Pt device with lower resistive switching voltages (mnplus7 V turn on and mnplus2 V turn off) and higher resistance ratio is more suitable for practical applications compared to the Al/V:SZO/LNO device. The switching speed of the Al/V:SZO-LNO/Pt device is 10 ns, which is the fastest speed that has ever been reported. The conduction mechanisms, nondestructive readout property, retention time, and endurance of this device are also reported in this paper.
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Reproducible switching effect in thin oxide films for memory applications
A. Beck, J. G. Bednorz, Ch. Gerber et al. · Applied Physics Letters · 2000 · 1.1K citations
Natural Sciences, Electrical Engineering, Materials Science +17