Kiyoung Lee - Concepedia

Author

Kiyoung Lee

Samsung (South Korea)ORCID

Also Known As

J. Jang, Jin-Ha Hwang, K Lee, K. Lee, K. Y. LEE, K. Y. Lee, K.J. Lee, K.Y. Lee, KangYoung Lee, Ki-Young Lee

135

Publications

2.4K

Citations

H-Index

Concepts

All Affiliations

Samsung (South Korea)Virginia Commonwealth University Cornell University Sungkyunkwan University University of Cambridge

About

Kiyoung Lee is an author at Samsung (South Korea) specializing in engineering, applied physics, and electrical engineering.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	19	25	1.1K
2	Applied Physics	18	22	924
3	Natural Sciences	4	4	174
4	Medicine	1	1	38
5	Chemistry	1	1	25

Kiyoung Lee

Publications

1.9K

Citations

H-Index

Page 1

	Year	Citations
Two-terminal floating-gate memory with van der Waals heterostructures for ultrahigh on/off ratio Quoc An Vu, Yong Seon Shin, Young Rae Kim, Nature Communications	2016	354
Layered Silicate Reinforced Polymer Nanocomposites: Development and Applications Lloyd A. Goettler, Kiyoung Lee, Hemish Thakkar Polymer Reviews Materials ScienceEngineeringPolymer Nanostructured MaterialsPolymer ScienceMechanical Engineering	2007	142
Identification of Si and O donors in hydride-vapor-phase epitaxial GaN W. J. Moore, Jaime A. Freitas, G. C. B. Braga, Applied Physics Letters Materials EngineeringSemiconductorsElectrical EngineeringSemiconductor TechnologyEngineering	2001	130
Two charge states of dominant acceptor in unintentionally doped GaN: Evidence from photoluminescence study M. A. Reshchikov, H. Morkoç̌, S. S. Park, Applied Physics Letters Dominant AcceptorCharge StatesElectrical EngineeringWide-bandgap SemiconductorEngineering	2002	80
Mobility Engineering in Vertical Field Effect Transistors Based on Van der Waals Heterostructures Yong Seon Shin, Kiyoung Lee, Young Rae Kim, Advanced Materials	2018	76
Ultrahigh Gauge Factor in Graphene/MoS<sub>2</sub> Heterojunction Field Effect Transistor with Variable Schottky Barrier Ilmin Lee, Won Tae Kang, Yong Seon Shin, ACS Nano	2019	76
Yellow and green luminescence in a freestanding GaN template M. A. Reshchikov, H. Morkoç, S. S. Park, Applied Physics Letters SemiconductorsWide-bandgap SemiconductorSolid-state LightingEngineeringYellow Luminescence	2001	74
Hall mobility and carrier concentration in free-standing high quality GaN templates grown by hydride vapor phase epitaxy Daming Huang, Feng Yun, M. A. Reshchikov, Solid-State Electronics Semiconductor TechnologyWide-bandgap SemiconductorElectrical EngineeringEngineeringApplied Physics	2001	70
Photoluminescence of GaN grown by molecular-beam epitaxy on a freestanding GaN template M. A. Reshchikov, Daming Huang, Feng Yun, Applied Physics Letters SemiconductorsExcitonic TransitionsElectrical EngineeringOptical MaterialsFreestanding Gan Template	2001	59
Characterization of free-standing hydride vapor phase epitaxy GaN Jacek B. Jasiński, W. Swider, Z. Liliental‐Weber, Applied Physics Letters Materials ScienceMaterials EngineeringElectrical EngineeringWide-bandgap SemiconductorEngineering	2001	54

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