Chung‐Yi Lin

Noise Reduction Using Compensation Capacitance for Bend Discontinuities of Differential Transmission Lines

Guang-Hwa Shiue, W.‐D. Guo, Chung‐Yi Lin et al. · IEEE Transactions on Advanced Packaging · 2006 · 92 citations

Electrical Engineering, Engineering, Bent Differential Lines +14

Improved control‐to‐output characteristics of a PWM buck‐boost converter

Yu‐Kang Lo, Jun‐Ting Chen, Chung‐Yi Lin et al. · International Journal of Circuit Theory and Applications · 2010 · 16 citations

Indirect Control, Power Electronics Converter, Electric Power Conversion +5

Record high mobility (428cm²/V-s) of CVD-grown Ge/strained Ge<inf>0.91</inf>Sn<inf>0.09</inf>/Ge quantum well p-MOSFETs

Yu-Shiang Huang, Chih-Hsiung Huang, Fang-Liang Lu et al. · 2016 · 12 citations

Semiconductor Technology, Electrical Engineering, Electronic Devices +11

Photoluminescence and electroluminescence from Ge/strained GeSn/Ge quantum wells

Chung‐Yi Lin, Chih-Hsiung Huang, Shih-Hsien Huang et al. · Applied Physics Letters · 2016 · 11 citations

Materials Science, Gesn/ge Quantum Wells, Strained Gesn +9

First vertically stacked GeSn nanowire pGAAFETs with I<inf>on</inf> = 1850μA/μm (V<inf>ov</inf> = V<inf>ds</inf> = −1V) on Si by GeSn/Ge CVD epitaxial growth and optimum selective etching

Yu-Shiang Huang, Fang-Liang Lu, Ya-Jui Tsou et al. · 2017 · 10 citations

Engineering, Optoelectronic Devices, Semiconductor Nanostructures +18