Ya-Jui Tsou

Vertically Stacked Strained 3-GeSn-Nanosheet pGAAFETs on Si Using GeSn/Ge CVD Epitaxial Growth and the Optimum Selective Channel Release Process

Yu-Shiang Huang, Fang-Liang Lu, Ya-Jui Tsou et al. · IEEE Electron Device Letters · 2018 · 38 citations

Engineering, Integrated Circuits, Silicon On Insulator +16

High-Mobility CVD-Grown Ge/Strained Ge_0.9Sn_0.1/Ge Quantum-Well pMOSFETs on Si by Optimizing Ge Cap Thickness

Yu-Shiang Huang, Ya-Jui Tsou, Chih-Hsiung Huang et al. · IEEE Transactions on Electron Devices · 2017 · 32 citations

Semiconductors, Semiconductor Technology, Electrical Engineering +10

Thermally Robust Perpendicular SOT-MTJ Memory Cells With STT-Assisted Field-Free Switching

Ya-Jui Tsou, Wei-Jen Chen, Huan-Chi Shih et al. · IEEE Transactions on Electron Devices · 2021 · 13 citations

Spin Torque, Magnetic Properties, Non-volatile Memory +30

Field-free Spin-orbit Torque Switching of Perpendicular Magnetic Tunnel Junction Utilizing Voltage-Controlled Magnetic Anisotropy Pulse Width Optimization

Zong-You Luo, Ya-Jui Tsou, Yi-Cheng Dong et al. · 2018 · 11 citations

Non-volatile Memory, Engineering, Short Latency +16

First vertically stacked GeSn nanowire pGAAFETs with I<inf>on</inf> = 1850μA/μm (V<inf>ov</inf> = V<inf>ds</inf> = −1V) on Si by GeSn/Ge CVD epitaxial growth and optimum selective etching

Yu-Shiang Huang, Fang-Liang Lu, Ya-Jui Tsou et al. · 2017 · 10 citations

Engineering, Optoelectronic Devices, Semiconductor Nanostructures +18