In this work, third-quadrant

$I$

–

$V$

characterization and surge current tests are carried out on SiC asymmetric-trench MOSFET (DUT A) and SiC double-trench MOSFET (DUT B) under various gate–source biases (

$V_{\mathrm {GS}}$

). The surge capability is found to be uninfluenced by

$V_{\mathrm {GS}}$

for DUT A. However, it has a 71.4% increase when

$V_{\mathrm {GS}}$

changes from 0 to −5 V for DUT B. The

$I$

–

$V$

characteristics in the third quadrant are measured under various

$V_{\mathrm {GS}}$

. It is found that the channel is open when the source–drain voltage is >2.5 V for DUT A and >1.5 V for DUT B at

$V_{\mathrm {GS}} =0$

V. High-temperature measurements are also conducted from 298 K to 448 K. When

$V_{\mathrm {GS}} =0$

V, the channel current takes up to 50% at 10-A source-to-drain current for DUT B, whereas only 10% for DUT A. This could lead to high current/heat density in the channel of DUT B. The transient resistance is also extracted from the surge

$I$

–

$V$

trajectories, and it is higher for DUT B tested under

$V_{\mathrm {GS}} =0$

V, which will increase the dissipated surge energy. Finally, the failure mechanism is analyzed. For DUT A, aluminum melting contributes to the failure at

$V_{\mathrm {GS}}= -5$

V and

$V_{\mathrm {GS}} =0$

V. For DUT B tested at

$V_{\mathrm {GS}} =0$

V, the earlier breakdown happens due to gate oxide failure.

#	Concept	H-Index	Publications	Citations
1	Engineering	10	10	240
2	Applied Physics	5	5	114
3	Education	1	1	16
4	Medicine	1	1	13
5	Computer Engineering	1	1	29

	Year	Citations

About

Top Concepts