Zhengyun Zhu

Investigation on Surge Current Capability of 4H-SiC Trench-Gate MOSFETs in Third Quadrant Under Various <i>V</i> _GS Biases

Zhengyun Zhu, Hongyi Xu, Li Liu et al. · IEEE Journal of Emerging and Selected Topics in Power Electronics · 2020 · 37 citations

Device Modeling, Electrical Engineering, Semiconductor Device +12

Degradation of 4H-SiC MOSFET body diode under repetitive surge current stress

Zhengyun Zhu, Na Ren, Hongyi Xu et al. · 2020 · 13 citations

Characterization and Analysis on Performance and Avalanche Reliability of SiC MOSFETs With Varied JFET Region Width

Zhengyun Zhu, Na Ren, Hongyi Xu et al. · IEEE Transactions on Electron Devices · 2021 · 13 citations

Semiconductor Technology, Electrical Engineering, Semiconductor Device +13

The Impact of Process Conditions on Surge Current Capability of 1.2 kV SiC JBS and MPS Diodes

Hongyi Xu, Na Ren, Jiupeng Wu et al. · Materials · 2021 · 12 citations · Full text

Reliability Investigation on SiC Trench MOSFET under Repetitive Surge Current Stress of Body Diode

Zhenyu Wang, Yunjia Li, Xiaohua Sun et al. · 2020 · 12 citations