Taehoon Kim

Evolution of Phase-Change Memory for the Storage-Class Memory and Beyond

Taehoon Kim, Seung-Yun Lee · IEEE Transactions on Electron Devices · 2020 · 126 citations

Non-volatile Memory, Electrical Engineering, Storage (Memory) +15

High-performance, cost-effective 2z nm two-deck cross-point memory integrated by self-align scheme for 128 Gb SCM

Taehoon Kim, Hyejung Choi, Myoungsub Kim et al. · 2018 · 59 citations

Non-volatile Memory, Engineering, Emerging Memory Technology +16

Pulse Dependent Threshold Voltage Variation of the Ovonic Threshold Switch in Cross-Point Memory

Sanghyun Ban, Hyejung Choi, Wootae Lee et al. · IEEE Electron Device Letters · 2020 · 30 citations

Non-volatile Memory, Electrical Engineering, Engineering +13

5.5 A 2.1e⁻ Temporal Noise and −105dB Parasitic Light Sensitivity Backside-Illuminated 2.3µm-Pixel Voltage-Domain Global Shutter CMOS Image Sensor Using High-Capacity DRAM Capacitor Technology

Jaekyu Lee, Seung Sik Kim, In-Gyu Baek et al. · 2020 · 26 citations

Electrical Engineering, Ai Industries, Engineering +8

Extremely high performance, high density 20nm self-selecting cross-point memory for Compute Express Link

Seokman Hong, Hyejung Choi, Jae-Hyuk Park et al. · 2022 International Electron Devices Meeting (IEDM) · 2022 · 23 citations

Non-volatile Memory, Engineering, Compute Express Link +19