Statistics
Publications
37
Citations
1.3K
H-Index
22
Active since
2007
Hyunjin Kim is an author at Samsung (South Korea) specializing in engineering, computer engineering, and electrical engineering.
Publications per year
2007–2023
37
37
A 512-Gb 3-b/Cell 64-Stacked WL 3-D-NAND Flash Memory
Chulbum Kim, Doo-Hyun Kim, Woopyo Jeong et al. · IEEE Journal of Solid-State Circuits · 2017 · 113 citations
Non-volatile Memory, Engineering, Emerging Memory Technology +16
11.4 A 512Gb 3b/cell 64-stacked WL 3D V-NAND flash memory
Chulbum Kim, Ji-Ho Cho, Woopyo Jeong et al. · 2017 · 84 citations
Hardware Security, 3D Ic Architecture, Electrical Engineering +15
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