P. Venn�gu�s

Epitaxial Lateral Overgrowth of GaN

B. Beaumont, P. Venn�gu�s, P. Gibart · physica status solidi (b) · 2001 · 208 citations

Semiconductors, Materials Science, Electrical Engineering +12

Crack-Free Thick GaN Layers on Silicon (111) by Metalorganic Vapor Phase Epitaxy

E. Feltin, B. Beaumont, M. La�gt et al. · physica status solidi (a) · 2001 · 46 citations

Semiconductors, Materials Science, Electrical Engineering +14

Structural Defects and Relation with Optoelectronic Properties in Highly Mg-Doped GaN

M. Leroux, P. Venn�gu�s, S. Dalmasso et al. · physica status solidi (a) · 2002 · 35 citations

Wide-bandgap Semiconductor, Engineering, Bulk Gan +17

Epitaxial Lateral Overgrowth of GaN on Silicon (111)

E. Feltin, B. Beaumont, P. Venn�gu�s et al. · physica status solidi (a) · 2001 · 15 citations

Materials Engineering, Materials Science, Epitaxial Growth +12