Hsu Cynthia

A 34 MB/s MLC Write Throughput 16 Gb NAND With All Bit Line Architecture on 56 nm Technology

Raul-Adrian Cernea, Long Pham, Farookh Moogat et al. · IEEE Journal of Solid-State Circuits · 2009 · 76 citations

Engineering, Computer Engineering, Computer Science +14

128Gb 3b/cell NAND flash memory in 19nm technology with 18MB/s write rate and 400Mb/s toggle mode

Yan Li, Seungpil Lee, Ken Oowada et al. · 2012 · 46 citations

Engineering, Computer Engineering, Computer Science +14

A 1-Tb 4b/Cell 4-Plane 162-Layer 3D Flash Memory With a 2.4-Gb/s I/O Speed Interface

J. Yuh, Jason Li, Heguang Li et al. · 2022 IEEE International Solid- State Circuits Conference (ISSCC) · 2022 · 29 citations

Engineering, Computer Engineering, Computer Science +15

A 34MB/s-Program-Throughput 16Gb MLC NAND with All-Bitline Architecture in 56nm

Raul Cernea, Long Pham, Farookh Moogat et al. · 2008 · 27 citations

Engineering, Computer Engineering, Computer Science +13

13.5 A 128Gb 1b/Cell 96-Word-Line-Layer 3D Flash Memory to Improve Random Read Latency with t_PROG=75µs and t_R=4µs

Toshiyuki Kouchi, Noriyasu Kumazaki, Masashi Yamaoka et al. · 2020 · 17 citations

Engineering, Computer Engineering, Computer Science +17