I. Regolin - Concepedia

Author

I. Regolin

University of Duisburg-Essen

Also Known As

I Regolin, I. Regolin, Ingo REGOLIN, Ingo Regolin

Publications

844

Citations

H-Index

Concepts

All Affiliations

University of Duisburg-Essen University of Göttingen

About

I. Regolin is an author at University of Duisburg-Essen specializing in applied physics, engineering, and nanotechnology.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	15	15	636
2	Applied Physics	15	15	636
3	Electrical Engineering	9	9	479
4	Chemistry	2	2	59
5	Chemical Engineering	1	1	27

I. Regolin

Publications

803

Citations

H-Index

Page 1

	Year	Citations
Controllable p-type doping of GaAs nanowires during vapor-liquid-solid growth Christoph Gutsche, I. Regolin, K. Blekker, Journal of Applied Physics EngineeringB GaasSingle NanowiresSemiconductor MaterialsOptoelectronic Devices	2009	111
High Transconductance MISFET With a Single InAs Nanowire Channel Q.T. Do, K. Blekker, I. Regolin, IEEE Electron Device Letters Device ModelingSemiconductorsElectrical EngineeringGate LengthEngineering	2007	75
Alignment of Semiconductor Nanowires Using Ion Beams Christian Borschel, Raphael Niepelt, Sebastian Geburt, Small	2009	65
n‐GaAs/InGaP/p‐GaAs Core‐Multishell Nanowire Diodes for Efficient Light‐to‐Current Conversion Christoph Gutsche, Andrey Lysov, Daniel Braam, Advanced Functional Materials EngineeringSemiconductor MaterialsOptoelectronic DevicesPhotovoltaicsSemiconductor Nanostructures	2011	62
n-Type Doping of Vapor–Liquid–Solid Grown GaAs Nanowires Christoph Gutsche, Andrey Lysov, I. Regolin, Nanoscale Research Letters SemiconductorsMaterials ScienceElectrical EngineeringElectronic DevicesEngineering	2010	61
Growth and characterisation of GaAs/InGaAs/GaAs nanowhiskers on (111) GaAs I. Regolin, Daniela Sudfeld, Stephan Lüttjohann, Journal of Crystal Growth Electrical EngineeringEngineeringApplied PhysicsGaas/ingaas/gaas NanowhiskersCompound Semiconductor	2006	44
P -type doping of GaAs nanowires D. Stichtenoth, Katharina Wegener, Christoph Gutsche, Applied Physics Letters SemiconductorsMaterials ScienceElectrical EngineeringElectronic DevicesEngineering	2008	42
Material and doping transitions in single GaAs-based nanowires probed by Kelvin probe force microscopy Sasa Vinaji, André Lochthofen, W. Mertin, Nanotechnology	2009	41
Axial pn-junctions formed by MOVPE using DEZn and TESn in vapor–liquid–solid grown GaAs nanowires I. Regolin, Christoph Gutsche, Andrey Lysov, Journal of Crystal Growth SemiconductorsMaterials ScienceIi-vi SemiconductorElectronic DevicesEngineering	2010	37
A precise optical determination of nanoscale diameters of semiconductor nanowires Gerald Brönstrup, Christian Leiterer, Norbert Jahr, Nanotechnology Optical MaterialsEngineeringSemiconductor NanostructuresOptical PropertiesNanometrology	2011	34

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