Direct Determination of Minority Carrier Diffusion Lengths at Axial GaAs Nanowire p–n Junctions

Christoph Gutsche, Raphael Niepelt, M. Gnauck, +4

Nano Letters

EngineeringPlasmon-enhanced PhotovoltaicsSemiconductor DeviceSemiconductorsElectronic Devices +15

Controllable p-type doping of GaAs nanowires during vapor-liquid-solid growth

Christoph Gutsche, I. Regolin, K. Blekker, +3

Journal of Applied Physics

EngineeringB GaasSingle NanowiresSemiconductor MaterialsOptoelectronic Devices +14

n‐GaAs/InGaP/p‐GaAs Core‐Multishell Nanowire Diodes for Efficient Light‐to‐Current Conversion

Christoph Gutsche, Andrey Lysov, Daniel Braam, +7

Advanced Functional Materials

EngineeringSemiconductor MaterialsOptoelectronic DevicesPhotovoltaicsSemiconductor Nanostructures +15

n-Type Doping of Vapor–Liquid–Solid Grown GaAs Nanowires

Christoph Gutsche, Andrey Lysov, I. Regolin, +3

Nanoscale Research Letters

SemiconductorsMaterials ScienceElectrical EngineeringElectronic DevicesEngineering +13

Far-Field Imaging for Direct Visualization of Light Interferences in GaAs Nanowires

Rachel Grange, Gerald Brönstrup, M. Kiometzis, +11

Nano Letters

EngineeringNano-opticsMicroscopyOptoelectronic DevicesLight Interferences +17

Axial pn-junctions formed by MOVPE using DEZn and TESn in vapor–liquid–solid grown GaAs nanowires

I. Regolin, Christoph Gutsche, Andrey Lysov, +5

Journal of Crystal Growth

SemiconductorsMaterials ScienceIi-vi SemiconductorElectronic DevicesEngineering +8

A precise optical determination of nanoscale diameters of semiconductor nanowires

Gerald Brönstrup, Christian Leiterer, Norbert Jahr, +7

Nanotechnology

Optical MaterialsEngineeringSemiconductor NanostructuresOptical PropertiesNanometrology +14

Spatially resolved photoelectric performance of axial GaAs nanowire pn-diodes

Andrey Lysov, Sasa Vinaji, Matthias Offer, +7

Nano Research

Optical properties of heavily doped GaAs nanowires and electroluminescent nanowire structures

Andrey Lysov, Matthias Offer, Christoph Gutsche, +5

Nanotechnology

Planar-defect characteristics and cross-sections of 〈001〉, 〈111〉, and 〈112〉 InAs nanowires

Zian Li, Christina Möller, Vadim Migunov, +8

Journal of Applied Physics

EngineeringLow Dimensional MaterialPlanar DefectsSemiconductor NanostructuresSemiconductors +17