Akio Iwabuchi

20 mΩ, 750 V High-Power AlGaN/GaN Heterostructure Field-Effect Transistors on Si Substrate

Shinichi Iwakami, Osamu Machida, Masataka Yanagihara et al. · Japanese Journal of Applied Physics · 2007 · 52 citations

Wide-bandgap Semiconductor, Electrical Engineering, Si Substrate +8

Normally-off AlGaN/GaN HFETs using NiO<inf>x</inf> gate with recess

Nobuo Kaneko, Osamu Machida, Masataka Yanagihara et al. · IEEE International Symposium on Power Semiconductor Devices and ICs/Proceedings of the International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices and ICs · 2009 · 44 citations

Normally-off Algan/gan Hfets, Wide-bandgap Semiconductor, Electrical Engineering +11

Evaluation of AlGaN/GaN Heterostructure Field-Effect Transistors on Si Substrate in Power Factor Correction Circuit

Shinichi Iwakami, Osamu Machida, Yoshimichi Izawa et al. · Japanese Journal of Applied Physics · 2007 · 24 citations

Electrical Engineering, Si Substrate, Engineering +12

Micro fluorescent analysis system integrating GaN-light-emitting-diode on a silicon platform

Hiroto Nakazato, H. Kawaguchi, Akio Iwabuchi et al. · Lab on a Chip · 2012 · 21 citations

Automotive HID Headlamps: Producing Compact Electronic Ballasts using Power ICs

Nanjyo Aoike, M. Hoshino, Akio Iwabuchi · IEEE Industry Applications Magazine · 2002 · 18 citations