Nobuo Kaneko

AlGaN/GaN Heterostructure Field-Effect Transistors (HFETs) on Si Substrates for Large-Current Operation

Shinichi Iwakami, Masataka Yanagihara, Osamu Machida et al. · Japanese Journal of Applied Physics · 2004 · 64 citations

Semiconductors, Wide-bandgap Semiconductor, Electrical Engineering +12

20 mΩ, 750 V High-Power AlGaN/GaN Heterostructure Field-Effect Transistors on Si Substrate

Shinichi Iwakami, Osamu Machida, Masataka Yanagihara et al. · Japanese Journal of Applied Physics · 2007 · 52 citations

Wide-bandgap Semiconductor, Electrical Engineering, Si Substrate +8

Normally-off AlGaN/GaN HFETs using NiO<inf>x</inf> gate with recess

Nobuo Kaneko, Osamu Machida, Masataka Yanagihara et al. · IEEE International Symposium on Power Semiconductor Devices and ICs/Proceedings of the International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices and ICs · 2009 · 44 citations

Normally-off Algan/gan Hfets, Wide-bandgap Semiconductor, Electrical Engineering +11

Evaluation of AlGaN/GaN Heterostructure Field-Effect Transistors on Si Substrate in Power Factor Correction Circuit

Shinichi Iwakami, Osamu Machida, Yoshimichi Izawa et al. · Japanese Journal of Applied Physics · 2007 · 24 citations

Electrical Engineering, Si Substrate, Engineering +12