Evaluation of AlGaN/GaN Heterostructure Field-Effect Transistors on Si Substrate in Power Factor Correction Circuit

Abstract

A new device of high-power AlGaN/GaN heterostructure field-effect transistors (HFETs) fabricated on a Si substrate is proposed. Its application of the power factor correction (PFC) circuit is presented for the first time. The AlGaN/GaN HFETs fabricated on the Si substrate with a gate width of 152 mm exhibited a breakdown voltage of more than 800 V, an on-resistance of 65 mΩ, and a maximum drain current of more than 50 A. As for the results of the experiment on the PFC at 200 W and f = 109 kHz, a power conversion efficiency of 95.2% was obtained. This value was about 1% higher than that of the PFC-circuit-using Si devices.