Masataka Yanagihara - Concepedia

Author

Masataka Yanagihara

Sanken Electric (Japan)

Also Known As

M. Yanagihara, Masataka Yanagihara

Publications

376

Citations

H-Index

Concepts

All Affiliations

Sanken Electric (Japan)Panasonic (Japan)Nagoya Institute of Technology

About

Masataka Yanagihara is an author at Sanken Electric (Japan) specializing in applied physics, engineering, and electrical engineering.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	7	7	365
2	Applied Physics	7	7	365
3	Electrical Engineering	6	6	283
4	Materials Engineering	1	1	82
5	Materials Science	1	1	82

Masataka Yanagihara

Publications

375

Citations

H-Index

Page 1

	Year	Citations
Influences of initial nitridation and buffer layer deposition on the morphology of a (0001) GaN layer grown on sapphire substrates Shunro Fuke, Hidekazu Teshigawara, Kazuhiro Kuwahara, Journal of Applied Physics Materials ScienceInitial NitridationMaterials EngineeringHexagonal GanEngineering	1998	82
AlGaN/GaN Power HFET on Silicon Substrate With Source-Via Grounding (SVG) Structure Masahiro Hikita, Masataka Yanagihara, Kazuhiro Nakazawa, IEEE Transactions on Electron Devices Svg StructureWide-bandgap SemiconductorElectrical EngineeringEngineeringSource-via Grounding	2005	82
AlGaN/GaN Heterostructure Field-Effect Transistors (HFETs) on Si Substrates for Large-Current Operation Shinichi Iwakami, Masataka Yanagihara, Osamu Machida, Japanese Journal of Applied Physics SemiconductorsWide-bandgap SemiconductorElectrical EngineeringSemiconductor TechnologyEngineering	2004	64
20 mΩ, 750 V High-Power AlGaN/GaN Heterostructure Field-Effect Transistors on Si Substrate Shinichi Iwakami, Osamu Machida, Masataka Yanagihara, Japanese Journal of Applied Physics Wide-bandgap SemiconductorElectrical EngineeringSi SubstrateEngineeringApplied Physics	2007	52
Normally-off AlGaN/GaN HFETs using NiO<inf>x</inf> gate with recess Nobuo Kaneko, Osamu Machida, Masataka Yanagihara, IEEE International Symposium on Power Semiconductor Devices and ICs/Proceedings of the International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices and ICs Normally-off Algan/gan HfetsWide-bandgap SemiconductorElectrical EngineeringElectronic DevicesEngineering	2009	44
Evaluation of AlGaN/GaN Heterostructure Field-Effect Transistors on Si Substrate in Power Factor Correction Circuit Shinichi Iwakami, Osamu Machida, Yoshimichi Izawa, Japanese Journal of Applied Physics Electrical EngineeringSi SubstrateEngineeringNew DevicePower Device	2007	24
35OV/150A AlGaNIGaN power HFET on silicon substrate with source-via grounding (SVG) structure Masahiro Hikita, Masataka Yanagihara, Kazuhiro Nakazawa, Wide-bandgap SemiconductorEngineeringSource-via GroundingConductive Si SubstratePower Electronics	2005	17
AlGaN/GaN devices for future power switching systems Daiju Ueda, Takuya Murata, Masahiro Hikita,	2006	10

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