M. Mierzwinski

Reliability investigation of InGaP/GaAs heterojunction bipolar transistors

S.R. Bahl, L.H. Camnitz, D. Houng et al. · IEEE Electron Device Letters · 1996 · 32 citations

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +14

A pseudomorphic MODFET structure with excellent linear power performance at mm-wave range

Guo-Gang Zhou, K.T. Chan, B. Hughes et al. · 2003 · 16 citations

N/sup +/ Algaas, Electrical Engineering, Millimeter Wave Technology +15

A monolithic 0.5 to 50 GHz MODFET distributed amplifier with 6 dB gain

J. Perdomo, M. Mierzwinski, Hiroshi Kondoh et al. · 2003 · 14 citations

Electrical Engineering, Db+or-0.5 Db, Db Gain +12

Reliability investigation of InGaP/GaAs heterojunction bipolar transistors

S.R. Bahl, L.H. Camnitz, D. Houng et al. · 2002 · 14 citations

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +14

A backside via process for thermal resistance improvement demonstrated using GaAs HBTs

J.S. Kofol, Barry Lin, M. Mierzwinski et al. · 2003 · 13 citations

Engineering, Gaas Hbts, Integrated Circuits +19