L.H. Camnitz - Concepedia

Author

L.H. Camnitz

Hewlett-Packard (United States)

Also Known As

L. Camnitz, L. H. Camnitz, L.H. Camnitz, Lovell H. Camnitz

Publications

255

Citations

H-Index

Concepts

All Affiliations

Hewlett-Packard (United States)Cornell University University of California San Diego Agilent Technologies (United States)

About

L.H. Camnitz is an author at Hewlett-Packard (United States) specializing in engineering, applied physics, and electrical engineering.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	9	9	251
2	Applied Physics	9	9	251
3	Electrical Engineering	9	9	251
4	Physics	3	3	83
5	Computer Engineering	1	1	32

L.H. Camnitz

Publications

251

Citations

H-Index

Page 1

	Year	Citations
Linearity characteristics of GaAs HBTs and the influence of collector design M. Iwamoto, P.M. Asbeck, T. S. Low, IEEE Transactions on Microwave Theory and Techniques Device ModelingElectrical EngineeringSemiconductor DeviceEngineeringNonlinear Circuit	2000	62
An accurate, large signal, high frequency model for GaAs HBTs L.H. Camnitz, S. Kofol, S.R. Bahl Device ModelingElectrical EngineeringSemiconductor DeviceEngineeringRf Semiconductor	2002	37
Reliability investigation of InGaP/GaAs heterojunction bipolar transistors S.R. Bahl, L.H. Camnitz, D. Houng, IEEE Electron Device Letters Wide-bandgap SemiconductorElectrical EngineeringEngineeringPhysicsIngap/gaas Hbt	1996	32
An accurate and simple MOSFET model for computer-aided design H.I. Hanafi, L.H. Camnitz, A. Dally IEEE Journal of Solid-State Circuits EngineeringCarrier MobilityComputer-aided DesignPower ElectronicsSimple Mosfet Model	1982	32
Microwave characterization of very high transconductance MODFET L.H. Camnitz, P.J. Tasker, H. Lee, SemiconductorsSemiconductor TechnologyElectrical EngineeringSemiconductor DeviceEngineering	1984	26
Passivation of GaAs surfaces and AlGaAs/GaAs heterojunction bipolar transistors using sulfide solutions and SiN<i>x</i> overlayer V. Malhotra, L.H. Camnitz, K. L. Seaward, Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena SemiconductorsSemiconductor TechnologyElectrical EngineeringEngineeringGaas Surfaces	1995	24
Reliability investigation of InGaP/GaAs heterojunction bipolar transistors S.R. Bahl, L.H. Camnitz, D. Houng, Wide-bandgap SemiconductorElectrical EngineeringEngineeringPhysicsNanoelectronics	2002	14
High frequency Si/Si/sub 1-x/Ge/sub x/ heterojunction bipolar transistors T. I. Kamins, K. Nauka, L.H. Camnitz, SemiconductorsSemiconductor TechnologyElectrical EngineeringEngineeringElectron-beam Lithography	2003	13
Influence of collector design on InGaP/GaAs HBT linearity M. Iwamoto, T. S. Low, C. Hutchinson, Device ModelingElectrical EngineeringIngap/gaas Hbt LinearityEngineeringRf Semiconductor	2002	11

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