L.H. Camnitz

Linearity characteristics of GaAs HBTs and the influence of collector design

M. Iwamoto, P.M. Asbeck, T. S. Low et al. · IEEE Transactions on Microwave Theory and Techniques · 2000 · 62 citations

Device Modeling, Electrical Engineering, Semiconductor Device +11

An accurate, large signal, high frequency model for GaAs HBTs

L.H. Camnitz, S. Kofol, S.R. Bahl · 2002 · 37 citations

Device Modeling, Electrical Engineering, Semiconductor Device +14

Reliability investigation of InGaP/GaAs heterojunction bipolar transistors

S.R. Bahl, L.H. Camnitz, D. Houng et al. · IEEE Electron Device Letters · 1996 · 32 citations

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +14

An accurate and simple MOSFET model for computer-aided design

H.I. Hanafi, L.H. Camnitz, A. Dally · IEEE Journal of Solid-State Circuits · 1982 · 32 citations

Engineering, Carrier Mobility, Computer-aided Design +17

Microwave characterization of very high transconductance MODFET

L.H. Camnitz, P.J. Tasker, H. Lee et al. · 1984 · 26 citations

Semiconductors, Semiconductor Technology, Electrical Engineering +12