An accurate and simple MOSFET model for computer-aided design

Abstract

Presents accurate device models (8-10 percent) to describe the drain-current characteristics of short-channel (>1 /spl mu/m) enhancement mode devices (EMD) and ion-implanted depletion-mode devices (DMD). The primary emphasis is on model accuracy and simplicity of formulation. The model form allows efficient extraction of model parameters resulting in accurate description of measured data. Also discussed is a derivation of the model equations with emphasis on a carrier mobility expression which includes the effects of surface scattering, channel scattering, and substrate bias. The effect of intrinsic source and/or drain series resistance on the carrier mobility is also included. The lowering of drain current due to bulk charge in the substrate and current modulation due to short and narrow channel effects and implicitly embedded in the models.