A. Höfler

A technology oriented model for transient diffusion and activation of boron in silicon

A. Höfler, T. Feudel, N. Strecker et al. · Journal of Applied Physics · 1995 · 29 citations

Semiconductor Technology, Defect Tolerance, Electrical Engineering +13

Novel shadow mask molecular beam epitaxial regrowth technique for selective doping

K.H. Gulden, Xuejian Wu, J. S. Smith et al. · Applied Physics Letters · 1993 · 24 citations

Excellent Selective Contacts, Engineering, Electron-beam Lithography +19

Electroabsorption in InGaAsP: electro-optical modulators and bistable optical switches

B. Knüpfer, P. Kiesel, A. Höfler et al. · Applied Physics Letters · 1993 · 18 citations

Optical Bistability, Optical Materials, Engineering +20

Optical Nonlinearities in <i>n–i–p–i</i> and Hetero‐<i>n–i–p–i</i> Structures

S. Malzer, N. Linder, K.H. Gulden et al. · physica status solidi (b) · 1992 · 17 citations

Optical Materials, Optical Nonlinearities, Engineering +19

Low power (bistable) opto-electrical threshold switches with high gain based on <i>n-i-p-i</i> doping superlattices

A. Höfler, K.H. Gulden, P. Kiesel et al. · Applied Physics Letters · 1993 · 15 citations

Optical Materials, N-i-p-i Doping Superlattices, Engineering +24