B. Knüpfer

Above band gap absorption spectra of the arsenic antisite defect in low temperature grown GaAs and AlGaAs

S.U. Dankowski, D. Streb, M. Ruff et al. · Applied Physics Letters · 1996 · 42 citations · Full text

Wide-bandgap Semiconductor, Optical Materials, Engineering +18

Cascadable differential <i>PnpN</i> optoelectronicswitchoperating at 50 Mbit/s with ultrahigh opticalinput sensitivity

B. Knüpfer, Paul Heremans · Electronics Letters · 1995 · 28 citations

Polarization dependence of the electroabsorption in low-temperature grown GaAs for above band-gap energies

M. Ruff, D. Streb, S.U. Dankowski et al. · Applied Physics Letters · 1996 · 23 citations · Full text

Categoryquantum Electronics, Optical Materials, Engineering +17

Polarization-insensitive high-contrast GaAs/AlGaAs waveguide modulator based on the Franz-Keldysh effect

B. Knüpfer, P. Kiesel, Michael Kneissl et al. · IEEE Photonics Technology Letters · 1993 · 22 citations

Thz Photonics, Short Wavelength Optic, Optical Materials +18

Electroabsorption in InGaAsP: electro-optical modulators and bistable optical switches

B. Knüpfer, P. Kiesel, A. Höfler et al. · Applied Physics Letters · 1993 · 18 citations

Optical Bistability, Optical Materials, Engineering +20