A. Gloukhian

Monolithic integration of InGaAsP-InP strained-layer distributed feedback laser and external modulator by selective quantum-well interdiffusion

A. Ramdane, P. Krauz, E. V. K. Rao et al. · IEEE Photonics Technology Letters · 1995 · 35 citations

Optical Materials, Engineering, Ingaasp-inp Strained-layer +17

High power operation of widely tunable 1.55 µmdistributed Bragg reflector laser

Franck Delorme, S. Grosmaire, A. Gloukhian et al. · Electronics Letters · 1997 · 25 citations

Selective area MOVPE growth of InP, InGaAs and InGaAsP using TBAs and TBP at different growth conditions

G. Zimmermann, A. Ougazzaden, A. Gloukhian et al. · Journal of Crystal Growth · 1997 · 17 citations

Chemical Engineering, Different Growth Conditions

Very low threshold current density GaInAs/AlGaInAs MQW lasers made by phosphorus-free MBE and operating in 1.5–1.6 μm range

M. Quillec, M. Allovon, F. Brillouet et al. · Electronics Letters · 1989 · 14 citations

Full-duplex operation of an in-line transceiveremitting at 1.3 µm and receiving at 1.55 µm

H. Nakajima, J. Charil, D. Robein et al. · Electronics Letters · 1996 · 13 citations