Isra Mahaboob

MOCVD growth of N-polar GaN on on-axis sapphire substrate: Impact of AlN nucleation layer on GaN surface hillock density

Jonathan Marini, Jeffrey M. Leathersich, Isra Mahaboob et al. · Journal of Crystal Growth · 2016 · 24 citations · Full text

Materials Science, Materials Engineering, Aluminium Nitride +9

Dynamic Control of AlGaN/GaN HEMT Characteristics by Implementation of a p-GaN Body-Diode-Based Back-Gate

Isra Mahaboob, Michail M. Yakimov, Kasey Hogan et al. · IEEE Journal of the Electron Devices Society · 2019 · 24 citations · Full text

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +13

Hillock assisted p-type enhancement in N-polar GaN:Mg films grown by MOCVD

Emma Rocco, Olivia Licata, Isra Mahaboob et al. · Scientific Reports · 2020 · 24 citations · Full text

Visible-Blind APD Heterostructure Design With Superior Field Confinement and Low Operating Voltage

John Bulmer, Puneet Suvarna, Jeff Leathersich et al. · IEEE Photonics Technology Letters · 2015 · 23 citations

Wide-bandgap Semiconductor, Engineering, Semiconductor Device +16

Polarization engineered N-polar Cs-free GaN photocathodes

Jonathan Marini, Isra Mahaboob, Emma Rocco et al. · Journal of Applied Physics · 2018 · 22 citations

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +11