Jonathan Marini

MOCVD growth of N-polar GaN on on-axis sapphire substrate: Impact of AlN nucleation layer on GaN surface hillock density

Jonathan Marini, Jeffrey M. Leathersich, Isra Mahaboob et al. · Journal of Crystal Growth · 2016 · 24 citations · Full text

Materials Science, Materials Engineering, Aluminium Nitride +9

Visible-Blind APD Heterostructure Design With Superior Field Confinement and Low Operating Voltage

John Bulmer, Puneet Suvarna, Jeff Leathersich et al. · IEEE Photonics Technology Letters · 2015 · 23 citations

Wide-bandgap Semiconductor, Engineering, Semiconductor Device +16

Polarization engineered N-polar Cs-free GaN photocathodes

Jonathan Marini, Isra Mahaboob, Emma Rocco et al. · Journal of Applied Physics · 2018 · 22 citations

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +11

Mg Incorporation Efficiency in Pulsed MOCVD of N-Polar GaN:Mg

Jonathan Marini, Isra Mahaboob, Kasey Hogan et al. · Journal of Electronic Materials · 2017 · 17 citations

Electrical Engineering, Engineering, Applied Physics +3

Ion Implantation-Based Edge Termination to Improve III-N APD Reliability and Performance

Puneet Suvarna, John Bulmer, Jeffrey M. Leathersich et al. · IEEE Photonics Technology Letters · 2014 · 16 citations

Wide-bandgap Semiconductor, Electrical Engineering, Ion Implantation +14