Kasey Hogan - Concepedia

Author

Kasey Hogan

SUNY Polytechnic Institute ORCID

Also Known As

K. Hogan, K.J. Hogan, Kasey Hogan

Publications

323

Citations

H-Index

Concepts

All Affiliations

SUNY Polytechnic Institute DEVCOM Army Research Laboratory Virginia Commonwealth University Jet Propulsion Laboratory

About

Kasey Hogan is an author at SUNY Polytechnic Institute specializing in engineering, applied physics, and electrical engineering.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	10	10	206
2	Applied Physics	9	9	189
3	Electrical Engineering	8	8	147
4	Materials Science	5	5	92
5	Materials Engineering	1	1	21

Kasey Hogan

Publications

262

Citations

H-Index

Page 1

	Year	Citations
Optical and mechanical performance of a novel magnetically actuated MEMS-based optical switch David A. Horsley, W.O. Davis, Kasey Hogan, Journal of Microelectromechanical Systems Optical MaterialsEngineeringMechanical EngineeringMicroelectromechanical SystemsFiber Optics	2005	43
Dynamic Control of AlGaN/GaN HEMT Characteristics by Implementation of a p-GaN Body-Diode-Based Back-Gate Isra Mahaboob, Michail M. Yakimov, Kasey Hogan, IEEE Journal of the Electron Devices Society Wide-bandgap SemiconductorElectrical EngineeringEngineeringNanoelectronicsApplied Physics	2019	24
Hillock assisted p-type enhancement in N-polar GaN:Mg films grown by MOCVD Emma Rocco, Olivia Licata, Isra Mahaboob, Scientific Reports	2020	24
p-type conductivity and damage recovery in implanted GaN annealed by rapid gyrotron microwave annealing Vincent Meyers, Emma Rocco, Travis J. Anderson, Journal of Applied Physics Materials ScienceWide-bandgap SemiconductorDamage RecoveryElectrical EngineeringPoint Defects	2020	23
MOCVD Growth and Characterization of Be-Doped GaN Benjamin McEwen, M. A. Reshchikov, Emma Rocco, ACS Applied Electronic Materials	2022	22
Influence of mask material on the electrical properties of selective area epitaxy GaN microstructures Isra Mahaboob, Kasey Hogan, Steven W. Novak, Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena Wide-bandgap SemiconductorEngineeringSemiconductor MaterialsSimilar DopantElectrical Properties	2018	21
Textured Poling of the Ferroelectric Dielectric Layer for Improved Organic Field‐Effect Transistors Amrit Laudari, Alec Pickett, F. Shahedipour‐Sandvik, Advanced Materials Interfaces EngineeringOrganic ElectronicsAbstract Polymer FerroelectricsPolymersFerroelectric Dielectric Layer	2019	20
Improved process control, lowered costs and reduced risks through the use of non-destructive mobility and sheet carrier density measurements on GaAs and GaN wafers Kasey Hogan, Austin Blew, M. Cordes Journal of Crystal Growth Improved Process ControlElectrical EngineeringEngineeringGan WafersAluminum Gallium Nitride	2004	17
Mg Incorporation Efficiency in Pulsed MOCVD of N-Polar GaN:Mg Jonathan Marini, Isra Mahaboob, Kasey Hogan, Journal of Electronic Materials Electrical EngineeringEngineeringApplied PhysicsMg Incorporation EfficiencyGan Power Device	2017	17
Selective Area Epitaxial Growth of Stretchable Geometry AlGaN-GaN Heterostructures Isra Mahaboob, Jonathan Marini, Kasey Hogan, Journal of Electronic Materials Materials ScienceEngineeringAluminum Gallium NitrideApplied PhysicsGan Power Device	2018	16

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