P.J. van den Oever - Concepedia

Author

P.J. van den Oever

Eindhoven University of Technology

Also Known As

P J van den Oever, P. J. Van Den Oever, P. J. van den Oever, P.J. van den Oever

Publications

341

Citations

H-Index

Concepts

All Affiliations

Eindhoven University of Technology

About

P.J. van den Oever is an author at Eindhoven University of Technology specializing in engineering, applied physics, and surface science.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	9	9	249
2	Applied Physics	8	8	215
3	Chemistry	5	5	157
4	Natural Sciences	2	2	88
5	Chemical Engineering	1	1	23

P.J. van den Oever

Publications

265

Citations

H-Index

Page 1

	Year	Citations
Production Mechanisms of NH and NH<sub>2</sub> Radicals in N<sub>2</sub>−H<sub>2</sub> Plasmas J. H. van Helden, P.J. van den Oever, W. M. M. Kessels, The Journal of Physical Chemistry A Flux DensitiesEngineeringPlasma SciencePlasma PhysicsPlasma Combustion	2007	52
Industrial high-rate (∼5 nm/s) deposited silicon nitride yielding high-quality bulk and surface passivation under optimum anti-reflection coating conditions Bram Hoex, A. Erven, R.C.M. Bosch, Progress in Photovoltaics Research and Applications EngineeringOptoelectronic DevicesThin Film Process TechnologyPhotovoltaicsSemiconductors	2005	42
Density and production of NH and NH2 in an Ar–NH3 expanding plasma jet P.J. van den Oever, J. H. van Helden, Carolien C. H. Lamers, Journal of Applied Physics EngineeringPlasma SciencePlasma PhysicsChemistryNh3 Flow	2005	36
Temperature dependence of the surface reactivity of SiH3 radicals and the surface silicon hydride composition during amorphous silicon growth W. M. M. Kessels, J.P.M. Hoefnagels, P.J. van den Oever, Surface Science Materials ScienceEngineeringSurface ScienceSih3 RadicalsAmorphous Silicon Growth	2003	34
N, NH, and NH2 radical densities in a remote Ar–NH3–SiH4 plasma and their role in silicon nitride deposition P.J. van den Oever, J. H. van Helden, J. Leo van Hemmen, Journal of Applied Physics Nh3 FlowRemote Ar–nh3–sih4 PlasmaChemical EngineeringNh2 Radical DensitiesEngineering	2006	23
a - Si : H ∕ c - Si heterointerface formation and epitaxial growth studied by real time optical probes J. J. H. Gielis, P.J. van den Oever, M. C. M. van de Sanden, Applied Physics Letters Optical MaterialsEngineeringOptoelectronic DevicesSilicon On InsulatorH-terminated Si	2007	20
Silicon surface passivation by hot-wire CVD Si thin films studied by in situ surface spectroscopy J. J. H. Gielis, Bram Hoex, P.J. van den Oever, Thin Solid Films Situ Surface SpectroscopyElectrical EngineeringEngineeringSilicon On InsulatorSurface Science	2009	19
Downstream ion and radical densities in an Ar–NH<sub>3</sub>plasma generated by the expanding thermal plasma technique P.J. van den Oever, J. Leo van Hemmen, J. H. van Helden, Plasma Sources Science and Technology	2006	16
The growth kinetics of silicon nitride deposited from the SiH4–N2 reactant mixture in a remote plasma W. M. M. Kessels, F.J.H. van Assche, P.J. van den Oever, Journal of Non-Crystalline Solids Remote PlasmaEngineeringPlasma ProcessingSurface ScienceApplied Physics	2004	12
Real time spectroscopic ellipsometry on ultrathin (&lt;50Å) hydrogenated amorphous silicon films on Si(100) and GaAs(100) P.J. van den Oever, M. C. M. van de Sanden, W. M. M. Kessels Journal of Applied Physics SemiconductorsEngineeringElectronic MaterialsCrystalline DefectsPhysics	2007	11

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