Atsuo Isobe

Nonvolatile Memory With Extremely Low-Leakage Indium-Gallium-Zinc-Oxide Thin-Film Transistor

Hiroki Inoue, Takanori Matsuzaki, Shuhei Nagatsuka et al. · IEEE Journal of Solid-State Circuits · 2012 · 99 citations

Engineering, Electrical Engineering, Materials Science +17

Embedded Memory and ARM Cortex-M0 Core Using 60-nm C-Axis Aligned Crystalline Indium–Gallium–Zinc Oxide FET Integrated With 65-nm Si CMOS

Tatsuya Onuki, Wataru Uesugi, Atsuo Isobe et al. · IEEE Journal of Solid-State Circuits · 2017 · 41 citations

Engineering, Computer Engineering, Electrical Engineering +15

DRAM Using Crystalline Oxide Semiconductor for Access Transistors and Not Requiring Refresh for More Than Ten Days

Tomoaki Atsumi, Shuhei Nagatsuka, Hideko Inoue et al. · 2012 · 38 citations

Engineering, Computer Engineering, Electrical Engineering +15

Embedded memory and ARM Cortex-M0 core using 60-nm C-axis aligned crystalline indium-gallium-zinc oxide FET integrated with 65-nm Si CMOS

Tatsuya Onuki, Wataru Uesugi, Hikaru Tamura et al. · 2016 · 30 citations

Engineering, Computer Engineering, Electrical Engineering +16

1Mb Non-Volatile Random Access Memory Using Oxide Semiconductor

Takanori Matsuzaki, Hiroki Inoue, Shuhei Nagatsuka et al. · 2011 · 29 citations

Engineering, Computer Engineering, Electrical Engineering +13