Hsiao-Che Wu

High density metal-insulator-metal capacitor based on ZrO2∕Al2O3∕ZrO2 laminate dielectric

Yung‐Hsien Wu, Chien-Kang Kao, Bo‐Yu Chen et al. · Applied Physics Letters · 2008 · 74 citations

Natural Sciences, Electrical Engineering, Materials Science +17

Nitrided Tetragonal $\hbox{ZrO}_{2}$ as the Charge-Trapping Layer for Nonvolatile Memory Application

Yung‐Hsien Wu, Lun-Lun Chen, Yuan-Sheng Lin et al. · IEEE Electron Device Letters · 2009 · 37 citations

Natural Sciences, Materials Engineering, Materials Science +16

Tetragonal $\hbox{ZrO}_{2}/\hbox{Al}_{2}\hbox{O}_{3}$ Stack as High-$\kappa$ Gate Dielectric for Si-Based MOS Devices

Yung‐Hsien Wu, Lun-Lun Chen, Rong-Jhe Lyu et al. · IEEE Electron Device Letters · 2010 · 30 citations

Natural Sciences, Materials Engineering, Materials Science +17

Effect of Process Pressure on Atomic Layer Deposition of Al[sub 2]O[sub 3]

Ming-Yen Li, Yung-Yuan Chang, Hsiao-Che Wu et al. · Journal of The Electrochemical Society · 2007 · 24 citations

Natural Sciences, Materials Engineering, Materials Science +17

Structure and property changes of ZrO2/Al2O3/ZrO2 laminate induced by low-temperature NH3 annealing applicable to metal–insulator–metal capacitor

Ming-Yen Li, Bin‐Siang Tsai, Pei-Chuen Jiang et al. · Thin Solid Films · 2010 · 16 citations

Natural Sciences, Materials Engineering, Materials Science +16