Lun-Lun Chen

MIM Capacitors With Crystalline-$\hbox{TiO}_{2}/ \hbox{SiO}_{2}$ Stack Featuring High Capacitance Density and Low Voltage Coefficient

Yung‐Hsien Wu, Wei-Yuan Ou, Chia-Chun Lin et al. · IEEE Electron Device Letters · 2011 · 31 citations

Materials Science, Materials Engineering, Electrical Engineering +14

Tetragonal $\hbox{ZrO}_{2}/\hbox{Al}_{2}\hbox{O}_{3}$ Stack as High-$\kappa$ Gate Dielectric for Si-Based MOS Devices

Yung‐Hsien Wu, Lun-Lun Chen, Rong-Jhe Lyu et al. · IEEE Electron Device Letters · 2010 · 30 citations

Engineering, Solid-state Chemistry, Silicon On Insulator +20

Nonvolatile Memory With Nitrogen-Stabilized Cubic-Phase $\hbox{ZrO}_{2}$ as Charge-Trapping Layer

Yung‐Hsien Wu, Lun-Lun Chen, Jia‐Rong Wu et al. · IEEE Electron Device Letters · 2010 · 30 citations

Materials Science, Materials Engineering, Non-volatile Memory +14

Ge-stabilized tetragonal ZrO2 as gate dielectric for Ge metal-oxide-semiconductor capacitors fabricated on Si substrate

Yung‐Hsien Wu, Min-Lin Wu, Jia‐Rong Wu et al. · Applied Physics Letters · 2010 · 24 citations

Si Substrate, Engineering, Silicon On Insulator +18

Crystalline ZrO2-gated Ge metal-oxide-semiconductor capacitors fabricated on Si substrate with Y2O3 as passivation layer

Yung‐Hsien Wu, Min-Lin Wu, Rong-Jhe Lyu et al. · Applied Physics Letters · 2011 · 20 citations

Materials Science, Oxide Heterostructures, Electrical Engineering +15