I. А. Prudaev

The Mechanism of Superfast Switching of Avalanche <inline-formula> <tex-math notation="LaTeX">${S}$ </tex-math> </inline-formula>-Diodes Based on GaAs Doped With Cr and Fe

I. А. Prudaev, V. L. Oleînik, Tatyana E. Smirnova et al. · IEEE Transactions on Electron Devices · 2018 · 28 citations

Wide-bandgap Semiconductor, Superfast Switching, Engineering +16

Low‐temperature transport of charge carriers in InGaN/GaN multiple quantum well light‐emitting diodes

I. А. Prudaev, S. S. Khludkov · physica status solidi (a) · 2014 · 18 citations

Semiconductors, Complex Current Dependence, Electrical Engineering +14

Conduction mechanism of metal-TiO 2 –Si structures

V. M. Kalygina, I. S. Egorova, I. А. Prudaev et al. · Chinese Journal of Physics · 2016 · 18 citations

Materials Science, Engineering, Oxide Electronics +3

Gallium nitride as a material for spintronics

S. S. Khludkov, I. А. Prudaev · Russian Physics Journal · 2013 · 17 citations

Magnetism, Spintronics, Engineering +3

Avalanche Delay and Dynamic Triggering in GaAs-Based <i>S</i>-Diodes Doped With Deep Level Impurity

I. А. Prudaev, Sergey N. Vainshtein, Maksim G. Verkholetov et al. · IEEE Transactions on Electron Devices · 2020 · 17 citations

Engineering, Power Electronics, Semiconductor Device +19