Maksim G. Verkholetov

Publications

Citations

H-Index

2018

Active since

Affiliations

National Research Tomsk State University(Current)

Bauman Moscow State Technical University

Maksim G. Verkholetov is an author at National Research Tomsk State University specializing in electronic engineering, electrical engineering, and physics.

ORCID

Top concepts

PhysicsEngineeringApplied PhysicsElectrical EngineeringElectronic EngineeringSemiconductorsDevice ModelingNanoelectronicsOptoelectronicsCharge Transport

Publications per year

2018–2020

Publications

The Mechanism of Superfast Switching of Avalanche <inline-formula> <tex-math notation="LaTeX">${S}$ </tex-math> </inline-formula>-Diodes Based on GaAs Doped With Cr and Fe

I. А. Prudaev, V. L. Oleînik, Tatyana E. Smirnova et al. · IEEE Transactions on Electron Devices · 2018 · 28 citations

Wide-bandgap Semiconductor, Superfast Switching, Engineering +16

Avalanche Delay and Dynamic Triggering in GaAs-Based <i>S</i>-Diodes Doped With Deep Level Impurity

I. А. Prudaev, Sergey N. Vainshtein, Maksim G. Verkholetov et al. · IEEE Transactions on Electron Devices · 2020 · 17 citations

Engineering, Power Electronics, Semiconductor Device +19

Charge Carrier Transport and Deep Levels Recharge in Avalanche S-Diodes Based on GaAs

I. А. Prudaev, Maksim G. Verkholetov, A. D. Koroleva · Technical Physics Letters · 2018 · 16 citations

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