J. D. Parsons

Thermally stable, low specific resistance (1.30×10−5 Ω cm2) TiC Ohmic contacts to <i>n</i>-type 6Hα-SiC

A. K. Chaddha, J. D. Parsons, G. B. Kruaval · Applied Physics Letters · 1995 · 49 citations

Materials Engineering, Materials Science, Electrical Engineering +12

Annealing of implantation damage and redistribution of impurities in SiC using a pulsed excimer laser

Stephen Y. Chou, Yung‐Yee Chang, K.H. Weiner et al. · Applied Physics Letters · 1990 · 36 citations

Engineering, Situ Reflectivity Measurement, Laser Applications +19

Temperature-independent unassisted pyrolytic MOCVD growth of cadmium telluride at 250°C using 2,5-dihydrotellurophene

L.S. Lichtmann, J. D. Parsons, Eun‐Hee Cirlin · Journal of Crystal Growth · 1988 · 34 citations

Materials Science, Ii-vi Semiconductor, Cadmium Telluride +7

Fabrication and characterization of GaAs Schottky barrier photodetectors for microwave fiber optic links

H. Blauvelt, G. D. Thurmond, J. D. Parsons et al. · Applied Physics Letters · 1984 · 32 citations

Optical Materials, Engineering, Optical Transmission System +19

Temperature-independent unassisted pyrolytic MOCVD growth of cadmium telluride at 290°C and mercury telluride at 325°C using dimethylcadmium methylallyltelluride and dimethylmercury

J. D. Parsons, L.S. Lichtmann · Journal of Crystal Growth · 1988 · 30 citations

Materials Science, Chemical Engineering, Environmental Chemistry +6