J. D. Parsons - Concepedia

Author

J. D. Parsons

HRL Laboratories (United States)

Also Known As

J. D. PARSONS, J. D. Parsons, J. Parsons, J.D. Parsons, Jacob Parsons, James D. Parsons, James Parsons, Ridged Fields

Publications

515

Citations

H-Index

Concepts

All Affiliations

HRL Laboratories (United States)Oregon Museum of Science and Industry Walker (United States)

About

J. D. Parsons is an author at HRL Laboratories (United States) specializing in engineering, materials science, and applied physics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	16	18	435
2	Applied Physics	11	11	260
3	Chemistry	5	5	137
4	Chemical Engineering	3	3	71
5	Social Sciences	1	1	17

J. D. Parsons

Publications

435

Citations

H-Index

Page 1

	Year	Citations
Thermally stable, low specific resistance (1.30×10−5 Ω cm2) TiC Ohmic contacts to <i>n</i>-type 6Hα-SiC A. K. Chaddha, J. D. Parsons, G. B. Kruaval Applied Physics Letters Materials EngineeringMaterials ScienceElectrical EngineeringEngineeringTlm Structures	1995	49
Annealing of implantation damage and redistribution of impurities in SiC using a pulsed excimer laser Stephen Y. Chou, Yung‐Yee Chang, K.H. Weiner, Applied Physics Letters EngineeringSitu Reflectivity MeasurementLaser ApplicationsImplantation DamageHigh-power Lasers	1990	36
Temperature-independent unassisted pyrolytic MOCVD growth of cadmium telluride at 250°C using 2,5-dihydrotellurophene L.S. Lichtmann, J. D. Parsons, Eun‐Hee Cirlin Journal of Crystal Growth Materials ScienceIi-vi SemiconductorCadmium TellurideEngineeringNanomaterials	1988	34
Fabrication and characterization of GaAs Schottky barrier photodetectors for microwave fiber optic links H. Blauvelt, G. D. Thurmond, J. D. Parsons, Applied Physics Letters Optical MaterialsEngineeringOptical Transmission SystemFiber OpticsFiber-optic Communication	1984	32
Temperature-independent unassisted pyrolytic MOCVD growth of cadmium telluride at 290°C and mercury telluride at 325°C using dimethylcadmium methylallyltelluride and dimethylmercury J. D. Parsons, L.S. Lichtmann Journal of Crystal Growth Materials ScienceChemical EngineeringEnvironmental ChemistryCadmium TellurideEngineering	1988	30
MOVPE growth of beryllium-doped gallium arsenide using diethylberyllium J. D. Parsons, L.S. Lichtmann, F. Krajenbrink, Journal of Crystal Growth Materials EngineeringInorganic ChemistryEngineeringCrystal Growth TechnologyMovpe Growth	1986	28
Low specific resistance (&lt;6×10−6 Ω cm2) TiC ohmic contacts to <i>n</i>-type β-SiC J. D. Parsons, G. B. Kruaval, A. K. Chaddha Applied Physics Letters Materials ScienceElectrical EngineeringEngineeringTlm StructuresMaterials Characterization	1994	27
Use of Diethylberyllium for Metal Organic Chemical Vapor Deposition of Beryllium‐Doped Gallium Arsenide J. D. Parsons, F. Krajenbrink Journal of The Electrochemical Society Materials EngineeringInorganic ChemistryChemical EngineeringMaterials ScienceEngineering	1983	23
Tin doping of MOVPE grown gallium arsenide using tetraethyltin J. D. Parsons, F. Krajenbrink Journal of Crystal Growth Materials ScienceInorganic ChemistryMaterials EngineeringTin DopingEngineering	1984	22
New York’s Glacial Lake Formation of Varved Silt and Clay J. D. Parsons Journal of the Geotechnical Engineering Division GlacierFacies AnalysisEngineeringGeomorphologyDistinct Subsoil	1976	21

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