K.H. Weiner

Investigation of the Changes in Electronic Properties of Nickel Oxide (NiO_<i>x</i>) Due to UV/Ozone Treatment

Raisul Islam, Gang Chen, Pranav Ramesh et al. · ACS Applied Materials & Interfaces · 2017 · 103 citations

Epitaxial Ge<i>x</i>Si1−<i>x</i>/Si (100) structures produced by pulsed laser mixing of evaporated Ge on Si (100) substrates

John R. Abelson, T. W. Sigmon, Ki Bum Kim et al. · Applied Physics Letters · 1988 · 63 citations

Engineering, Laser Applications, Optoelectronic Devices +16

Annealing of implantation damage and redistribution of impurities in SiC using a pulsed excimer laser

Stephen Y. Chou, Yung‐Yee Chang, K.H. Weiner et al. · Applied Physics Letters · 1990 · 36 citations

Engineering, Situ Reflectivity Measurement, Laser Applications +19

A shallow junction submicrometer PMOS process without high temperature anneals

P.G. Carey, K.H. Weiner, T. W. Sigmon · IEEE Electron Device Letters · 1988 · 32 citations

Gas Immersion Laser, Engineering, Laser Applications +20

Crystallinity, strain, and thermal stability of heteroepitaxial Si1−<i>x</i>Ge<i>x</i>/Si (100) layers created using pulsed laser induced epitaxy

K.-Josef Kramer, S. Talwar, T. W. Sigmon et al. · Applied Physics Letters · 1992 · 28 citations

Materials Science, Ion Implantation, Epitaxial Growth +14