Publication | Closed Access
Fabrication and characterization of GaAs Schottky barrier photodetectors for microwave fiber optic links
32
Citations
4
References
1984
Year
Optical MaterialsEngineeringOptical Transmission SystemFiber OpticsFiber-optic CommunicationRf SemiconductorPhotodetectors3-Db BandwidthsOptical PropertiesWave ModulatorOptical CommunicationOptical SystemsPhotonicsElectrical EngineeringLaser DiodesMicrowave PhotonicsElectro-optics DeviceOptic LinksApplied PhysicsOptical Fiber CommunicationOptoelectronicsOptical Devices
High-Speed GaAs Schottky barrier photodiodes have been fabricated and characterized. These detectors have 3-dB bandwidths of 20 GHz and quantum efficiencies as high as 70%. The response of the detectors to light modulated at 1–18 GHz has been directly measured. Microwave modulated optical signals were obtained by using a LiNbO3 traveling wave modulator and by heterodyning two laser diodes.
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