Birgit Kallinger

Threading dislocations in n- and p-type 4H–SiC material analyzed by etching and synchrotron X-ray topography

Birgit Kallinger, Sebastian Polster, Patrick Berwian et al. · Journal of Crystal Growth · 2010 · 53 citations

Materials Engineering, Materials Science, Engineering +9

Step-controlled homoepitaxial growth of 4H–SiC on vicinal substrates

Birgit Kallinger, Patrick Berwian, Jochen Friedrich et al. · Journal of Crystal Growth · 2013 · 25 citations · Full text

Materials Science, Materials Engineering, Engineering +4

Imaging Defect Luminescence of 4H-SiC by Ultraviolet-Photoluminescence

Patrick Berwian, Daniel Kaminzky, Katharina Rosshirt et al. · Diffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena · 2015 · 20 citations

Defect Tolerance, Electrical Engineering, Photoluminescence +14

Scalable Quantum Memory Nodes Using Nuclear Spins in Silicon Carbide

Shravan Kumar Parthasarathy, Birgit Kallinger, Florian Kaiser et al. · Physical Review Applied · 2023 · 20 citations

Doping induced lattice misfit in 4H–SiC homoepitaxy

Birgit Kallinger, Patrick Berwian, Jochen Friedrich et al. · Journal of Crystal Growth · 2012 · 18 citations

Semiconductor Technology, Induced Lattice Misfit, Engineering +4