Threading dislocations in n- and p-type 4H–SiC material analyzed by etching and synchrotron X-ray topography

Introduction to Dislocations

D. Hüll, D. J. Bacon · Materials Today · 2011 · 1.5K citations · Full text

Sublimation growth of SiC single crystalline ingots on faces perpendicular to the (0001) basal plane

Jun Takahashi, Masatoshi Kanaya, Yuichiro Fujiwara · Journal of Crystal Growth · 1994 · 152 citations

Engineering, Materials Engineering, Materials Science +16

Dislocations in Silicon Carbide

S. Amelinckx, G. Strumane, W. W. Webb · Journal of Applied Physics · 1960 · 90 citations

Natural Sciences, Materials Engineering, Materials Science +17

Optimization of KOH etching parameters for quantitative defect recognition in n- and p-type doped SiC

S. A. Sakwe, Ralf Müller, Peter J. Wellmann · Journal of Crystal Growth · 2006 · 81 citations

Natural Sciences, Materials Engineering, Materials Science +14

High-geometrical-resolution imaging of dislocations in SiC using monochromatic synchrotron topography

Xianrong Huang, David R. Black, Albert T. Macrander et al. · Applied Physics Letters · 2007 · 62 citations

Natural Sciences, Materials Engineering, Materials Science +17