C.R. Selvakumar

SiGe-channel n-MOSFET by germanium implantation

C.R. Selvakumar, Bert Hecht · IEEE Electron Device Letters · 1991 · 73 citations

Engineering, Electrical Engineering, Materials Science +14

Structural, optical, morphological and thermal properties of TiO 2 –Al and TiO 2 –Al 2 O 3 composite powders by ball milling

T. Mahalingam, C.R. Selvakumar, Е. Ranjith Kumar et al. · Physics Letters A · 2017 · 62 citations

Natural Sciences, Materials Engineering, Materials Science +17

Comparison of experimental and computed results on arsenic- and phosphorus-doped polysilicon emitter bipolar transistors

P. Ashburn, D.J. Roulston, C.R. Selvakumar · IEEE Transactions on Electron Devices · 1987 · 42 citations

Engineering, Electrical Engineering, Materials Science +17

The general transient charge control relation: a new charge control relation for semiconductor devices

J.S. Hamel, C.R. Selvakumar · IEEE Transactions on Electron Devices · 1991 · 38 citations

Engineering, Electrical Engineering, Microelectronics +16

Simple general analytical solution to the minority carrier transport in heavily doped semiconductors

C.R. Selvakumar · Journal of Applied Physics · 1984 · 37 citations

Engineering, Electrical Engineering, Materials Science +17