D. Mahaveer Sathaiya

Mechanism of the reverse gate leakage in AlGaN/GaN high electron mobility transistors

Shreepad Karmalkar, D. Mahaveer Sathaiya, M. S. Shur · Applied Physics Letters · 2003 · 132 citations

Semiconductors, Wide-bandgap Semiconductor, Electrical Engineering +12

Thermionic trap-assisted tunneling model and its application to leakage current in nitrided oxides and AlGaN∕GaN high electron mobility transistors

D. Mahaveer Sathaiya, Shreepad Karmalkar · Journal of Applied Physics · 2006 · 87 citations

Electrical Engineering, Engineering, Tunneling Microscopy +12

On the resolution of the mechanism for reverse gate leakage in AlGaN/GaN HEMTs

Shreepad Karmalkar, N. Satyan, D. Mahaveer Sathaiya · IEEE Electron Device Letters · 2006 · 43 citations

Trap-assisted Tunneling, Wide-bandgap Semiconductor, Electrical Engineering +13

Edge Effects on Gate Tunneling Current in HEMTs

D. Mahaveer Sathaiya, Shreepad Karmalkar · IEEE Transactions on Electron Devices · 2007 · 33 citations

Semiconductors, Wide-bandgap Semiconductor, Electrical Engineering +10

Monolayer-MoS₂ Stacked Nanosheet Channel with C-type Metal Contact

Yun-Yan Chung, Wei‐Sheng Yun, Bo-Jhih Chou et al. · 2023 · 20 citations