Wei‐Sheng Yun

First Demonstration of GAA Monolayer-MoS₂ Nanosheet nFET with 410μA μ m ID 1V VD at 40nm gate length

Yun-Yan Chung, Bo-Jhih Chou, Chen-Feng Hsu et al. · 2022 International Electron Devices Meeting (IEDM) · 2022 · 69 citations

Nearly Ideal Subthreshold Swing in Monolayer MoS₂ Top-Gate nFETs with Scaled EOT of 1 nm

Tsung-En Lee, Yuan-Chun Su, Bo-Jiun Lin et al. · 2022 International Electron Devices Meeting (IEDM) · 2022 · 23 citations

Semiconductor Technology, Scaled Eot, Electrical Engineering +10

Monolayer-MoS₂ Stacked Nanosheet Channel with C-type Metal Contact

Yun-Yan Chung, Wei‐Sheng Yun, Bo-Jhih Chou et al. · 2023 · 20 citations

High-performance monolayer MoS₂ nanosheet GAA transistor

Bo-Jhih Chou, Yun-Yan Chung, Wei‐Sheng Yun et al. · Nanotechnology · 2023 · 19 citations · Full text

Status and Performance of Integration Modules Toward Scaled CMOS with Transition Metal Dichalcogenide Channel

Ang‐Sheng Chou, Ching-Hao Hsu, Yu‐Tung Lin et al. · 2023 · 17 citations

Engineering, Device Integration, Two-dimensional Materials +19