Thomas Löher - Concepedia

Author

Thomas Löher

Technische Universität Berlin ORCID

Also Known As

Löher, T., Michael Schiffer, T Löher, T. Loher, T. Löher, Th. Löher, Thomas Loher, Thomas Löher

Publications

761

Citations

H-Index

Concepts

All Affiliations

Technische Universität Berlin Fraunhofer Institute for Reliability and Microintegration The University of Tokyo Fraunhofer Institute for Telecommunications, Heinrich Hertz Institute Freudenberg (Germany)

About

Thomas Löher is an author at Technische Universität Berlin specializing in engineering, materials science, and electrical engineering.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	16	24	654
2	Applied Physics	10	12	349
3	Chemistry	3	3	117
4	Natural Sciences	2	2	78
5	Chemical Engineering	1	1	39

Thomas Löher

Publications

692

Citations

H-Index

Page 1

	Year	Citations
Formation and electronic properties of the CdS/CuInSe2 (011) heterointerface studied by synchrotron-induced photoemission Thomas Löher, Wolfram Jaegermann, C. Pettenkofer Journal of Applied Physics EngineeringPhoto-electrochemical CellElectronic PropertiesPhotovoltaicsSemiconductor Nanostructures	1995	75
Cyclic endurance reliability of stretchable electronic substrates Frederick Bossuyt, Johannes Guenther, Thomas Löher, Microelectronics Reliability Materials ScienceEngineeringHardware ReliabilityFlexible ElectronicsCircuit Reliability	2010	72
Band lineup between CdS and ultra high vacuum-cleaved CuInS2 single crystals Andreas Klein, Thomas Löher, Y. Tomm, Applied Physics Letters EngineeringChalcopyrite SemiconductorsCrystal Growth TechnologyCds/cuins2 InterfacesNeutrality Levels	1997	54
Chemical interaction of Na with cleaved (011) surfaces of CuInSe2 Andreas Klein, Thomas Löher, C. Pettenkofer, Journal of Applied Physics EngineeringChemistryChemical DepositionChemical EngineeringElectrochemical Surface Science	1996	39
Stretchable Circuit Board Technology and Application René Vieroth, Thomas Löher, Manuel Seckel, Smart TextileEngineeringMechanical EngineeringWearable TechnologyMass Production	2009	39
Structural dipoles at interfaces between polar II-VI semiconductors CdS and CdTe and non-polar layered transition metal dichalcogenide semiconductors MoTe<sub>2</sub>and WSe<sub>2</sub> Thomas Löher, Y. Tomm, C. Pettenkofer, Semiconductor Science and Technology Oxide HeterostructuresSemiconductorsMaterials ScienceIi-vi SemiconductorEngineering	2000	32
Highly oriented layers of the three-dimensional semiconductor CdTe on the two-dimensional layered semiconductors MoTe2 and WSe2 Thomas Löher, Y. Tomm, Andreas Klein, Journal of Applied Physics EngineeringTwo-dimensional MaterialsNucleation LayerSemiconductor NanostructuresSemiconductors	1996	32
Stretchable electronic systems Thomas Löher, Dion Manessis, Ralf Heinrich, EngineeringFlexible Manufacturing TechnologyMechanical EngineeringFoldable StructureFlexible Sensor	2006	32
Low temperature adsorption of water on cleaved GaAs(110) surfaces O. Henrion, Thomas Löher, Andreas Klein, Surface Science EngineeringSurface AnalysisSurface ScienceApplied PhysicsChemisorption	1996	26
Van der Waals type buffer layers: epitaxial growth of the large lattice mismatch system CdS/InSe/H–Si(111) Thomas Löher, Kohei Ueno, A. Koma Applied Surface Science EngineeringPhysicsApplied PhysicsCondensed Matter PhysicsSemiconductor Material	1998	25

Page 1