Applied Physics Letters · 1997 · 54 citations · 11 references
EngineeringMaterials SciencePhysicsCondensed Matter PhysicsSemiconductor MaterialsSpectroscopyCompound SemiconductorsSemiconductor InterfacesSemiconductor PhysicsSemiconductor SurfacesSolar CellsWide Band Gap SemiconductorsInterface FormationSolar Cell CharacterizationSolar Cell Device PhysicsTransition Metal DichalcogenidesValence BandValence Band Structure
The interface formation between vacuum evaporated CdS and ultrahigh vacuum-cleaved CuInS2 single crystals has been studied by synchrotron excited photoelectron spectroscopy. The valence band discontinuity is determined directly from valence band difference spectra to be ΔEV=0.6 (±0.1) eV. This value is significantly smaller than for other preparation conditions given in the literature and evidently not suitable for solar cell applications. The similarity to observations at the CdS/CuInS2 interfaces suggests that neutrality levels play a dominant role in establishing the band lineup at interfaces containing chalcopyrite semiconductors.
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Chalcopyrite/defect chalcopyrite heterojunctions on the basis of CuInSe2
D. Schmid, M. Ruckh, F. Grünwald et al. · Journal of Applied Physics · 1993 · 613 citations
Natural Sciences, Materials Engineering, Materials Science +17
CuInS2 based thin film solar cell with 10.2% efficiency
Roland Scheer, T. Walter, Hans‐Werner Schock et al. · Applied Physics Letters · 1993 · 299 citations
Heterojunction band discontinuities
J. L. Shay, S. Wagner, J. C. Phillips · Applied Physics Letters · 1976 · 272 citations