Concepedia

D. Hoehl

DH

4

Publications

71

Citations

4

H-Index

1979

Active since

Affiliations

Institute of Semiconductor Physics(Current)

Russian Academy of Sciences

D. Hoehl is an author at Institute of Semiconductor Physics specializing in defect tolerance, applied physics, and engineering.

Top concepts

PhysicsEngineeringApplied PhysicsDefect ToleranceMaterial ScienceCrystalline DefectsSemiconductorsMicroscopyMicrostructureQuantum Materials

Publications per year

1979–1986

4

Publications

4

Radiation-induced rod-like defects in silicon and germanium

H. Bartsch, D. Hoehl, G. Kästner · physica status solidi (a) · 1984 · 21 citations

Semiconductors, Materials Science, Engineering +15

Analysis of rod-like defects in silicon and germanium by means of high-resolution electron microscopy

M. Pasemann, D. Hoehl, A. L. Aseev et al. · physica status solidi (a) · 1983 · 21 citations

Materials Science, Engineering, Characteristic Radiation Damages +15

Electron Beam Induced Changes of the Real Structure of Semiconductors

A. L. Aseev, V. M. Astakhov, O. P. Pchelyakov et al. · Kristall und Technik · 1979 · 19 citations

Semiconductors, Materials Science, Electrical Engineering +13

Structure of Annealed Polycrystalline Silicon Films. I. Recrystallization

F. L. Edelman, J. Heydenreich, D. Hoehl et al. · physica status solidi (a) · 1986 · 10 citations

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