M. Pasemann

Analysis of rod-like defects in silicon and germanium by means of high-resolution electron microscopy

M. Pasemann, D. Hoehl, A. L. Aseev et al. · physica status solidi (a) · 1983 · 21 citations

Materials Science, Engineering, Characteristic Radiation Damages +15

Observations of point defects in silicon by means of dark-field lattice plane imaging

N. D. Zakharov, M. Pasemann, V. N. Rozhanski · physica status solidi (a) · 1982 · 20 citations

Optical Materials, Point Defects, Engineering +21

Microdefects in silicon different from swirls

Ralf Köhler, W. Möhling, M. Pasemann · physica status solidi (a) · 1979 · 18 citations

Engineering, Microscopy, Silicon On Insulator +20

Generation of radiation-induced defects at room temperature in silicon in a HVEM and their annihilation

P.‐E. Werner, M. Pasemann · Ultramicroscopy · 1982 · 12 citations

Defect Tolerance, Room Temperature, Engineering +8

Mössbauer Spectroscopical and Electron Microscopical Investigations of the Behaviour of Cobalt in Silicon

M. Pasemann, W. Bergholz, W. Schröter · physica status solidi (a) · 1984 · 12 citations

Engineering, Chemistry, Silicon On Insulator +19