A. Raychaudhuri

Features and mechanisms of the saturating hot-carrier degradation in LDD NMOSFETs

A. Raychaudhuri, M. Jamal Deen, W. S. Kwan et al. · IEEE Transactions on Electron Devices · 1996 · 64 citations

Device Modeling, Electrical Engineering, Hot-carrier Degradation +13

A simple method to extract the asymmetry in parasitic source and drain resistances from measurements on a MOS transistor

A. Raychaudhuri, J. Kolk, M. Jamal Deen et al. · IEEE Transactions on Electron Devices · 1995 · 40 citations

Device Modeling, Electrical Engineering, Engineering +10

A simple method to qualify the LDD structure against the early mode of hot-carrier degradation

A. Raychaudhuri, M. Jamal Deen, M.I.H. King et al. · IEEE Transactions on Electron Devices · 1996 · 31 citations

Device Modeling, Electrical Engineering, Hot-carrier Degradation +12

Finding the asymmetric parasitic source and drain resistances from the a.c. conductances of a single MOS transistor

A. Raychaudhuri, M. Jamal Deen, M.I.H. King et al. · Solid-State Electronics · 1996 · 29 citations

Device Modeling, Electrical Engineering, Engineering +8