W. S. Kwan

Features and mechanisms of the saturating hot-carrier degradation in LDD NMOSFETs

A. Raychaudhuri, M. Jamal Deen, W. S. Kwan et al. · IEEE Transactions on Electron Devices · 1996 · 64 citations

Device Modeling, Electrical Engineering, Hot-carrier Degradation +13

A simple method to qualify the LDD structure against the early mode of hot-carrier degradation

A. Raychaudhuri, M. Jamal Deen, M.I.H. King et al. · IEEE Transactions on Electron Devices · 1996 · 31 citations

Device Modeling, Electrical Engineering, Hot-carrier Degradation +12

Hot-carrier effects on radio frequency noise characteristics of LDD <i>n</i>-type metal–oxide–semiconductor field effect transistors

W. S. Kwan, C. H. Chen, M. Jamal Deen · Journal of Vacuum Science & Technology A Vacuum Surfaces and Films · 2000 · 19 citations

Semiconductor Technology, Electrical Engineering, Engineering +10

Hot-carrier effects on the scattering parameters of lightly doped drain n-type metal–oxide–semiconductor field effect transistors

W. S. Kwan, M. Jamal Deen · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 1998 · 12 citations

Semiconductors, Device Modeling, Electrical Engineering +12

Hot-carrier effects on the scattering parameters of lightly doped drain n-type metal-oxide-semiconductor field effect transistor

W. S. Kwan, M. Jamal Deen · Journal of Vacuum Science & Technology A Vacuum Surfaces and Films · 1998 · 10 citations

Device Modeling, Electrical Engineering, Hot-carrier Stress +11