M.J. Rendon

Fluorine-enhanced boron diffusion in amorphous silicon

Jeannette M. Jacques, L. S. Robertson, K. S. Jones et al. · Applied Physics Letters · 2003 · 42 citations

Natural Sciences, Materials Engineering, Materials Science +17

Transient enhanced diffusion after laser thermal processing of ion implanted silicon

K. S. Jones, Heather Banisaukas, Josh Glassberg et al. · Applied Physics Letters · 1999 · 36 citations

Engineering, Materials Engineering, Materials Science +17

A 100 nm copper/low-k bulk CMOS technology with multi Vt and multi gate oxide integrated transistors for low standby power, high performance and RF/analog system on chip applications

G.C.-F. Yeap, J. Chen, Piotr Grudowski et al. · 2003 · 21 citations

Engineering, Computer Engineering, Electrical Engineering +17

Activation and deactivation studies of laser thermal annealed boron, arsenic, phosphorus, and antimony ultra-shallow abrupt junctions

R.W. Murto, K. S. Jones, M.J. Rendon et al. · 2000 International Conference on Ion Implantation Technology Proceedings. Ion Implantation Technology - 2000 (Cat. No.00EX432) · 2003 · 13 citations

Engineering, Materials Engineering, Materials Science +17

Boron Solubility Limits Following Low Temperature Solid Phase Epitaxial Regrowth

C. D. Lindfors, K. S. Jones, M.J. Rendon · MRS Proceedings · 2001 · 13 citations

Natural Sciences, Materials Engineering, Materials Science +8